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| New Product SI3879DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES ID (A)a - 5.0 - 4.2 Qg (Typ) 4.5 nC PRODUCT SUMMARY VDS (V) - 20 rDS(on) () 0.070 at VGS = - 5.0 V 0.105 at VGS = - 2.5 V * LITTLE FOOT(R) Plus Schottky Power MOSFET APPLICATIONS * HDD - DC-DC Converter * Asynchronous Rectification RoHS COMPLIANT SCHOTTKY PRODUCT SUMMARY VKA (V) 20 Vf (V) Diode Forward Voltage 0.45 at 1 A IF (A)a 2 TSOP-6 Top View A 1 6 D/K S A 3 mm S 2 5 D/K Marking Code IG XXX Lot Traceability and Date Code Part # Code G G 3 4 D/K 2.85 mm D Ordering Information: SI3879DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET K ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) TC = 25 C Continuous Drain Current (TJ = 150 C) (MOSFET) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current (MOSFET) Continuous Source-Drain Diode Current (MOSFET Diode Conduction) Average Forward Current (Schottky) Pulsed Forward Current (Schottky) TC = 25 C Maximum Power Dissipation (MOSFET) TC = 70 C TA = 25 C TA = 70 C TC = 25 C Maximum Power Dissipation (Schottky) TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range TJ, Tstg PD TC = 25 C TA = 25 C IDM IS IF IFM ID Symbol VDS VKA VGS Limit - 20 20 12 - 5.0 - 4.0 - 4.0b, c - 3.0b, c - 20 - 2.7 - 1.6b, c 2b 5 3.3 2.1 2.0b, c 1.2b, c 1.9 1.2 1.3b, c 0.9b, c - 55 to 150 C W A V Unit Document Number: 74958 S-71290-Rev. A, 02-Jul-07 www.vishay.com 1 New Product SI3879DV Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient (MOSFET)b, d Maximum Junction-to-Foot (Drain) (MOSFET) Maximum Junction-to-Ambient (Schottky)b, e Maximum Junction-to-Foot (Drain) (Schottky) t 5 sec Steady State t 5 sec Steady State Symbol RthJA RthJF RthJA RthJF Typical 51 30 73 50 Maximum 62.5 37 90 65 Unit C/W Notes: a. Based on TC = 25 C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 sec. d. Maximum under Steady State conditions is 105 C/W. e. Maximum under Steady State conditions is 125 C/W. SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) rDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf VDD = - 10 V, RL = 2.0 ID - 5.0 A, VGEN = - 4.5 V, Rg = 1 VDD = - 10 V, RL = 2.0 ID - 5.0 A, VGEN = - 10 V, Rg = 1 f = 1 MHz VDS = - 10 V, VGS = - 10 V, ID = - 5.0 A VDS = - 10 V, VGS = - 4.5 V, ID = - 4.5 A VDS = - 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = - 250 A ID = - 250 A VDS = VGS, ID = - 250 A VDS = 0 V, VGS = 12 V VDS = - 20 V, VGS = 0 V VDS = - 20 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 3.5 A VGS = - 2.5 V, ID = - 3.0 A VDS = - 10 V, ID = - 3.5 A -8 0.058 0.085 10 480 132 55 9.7 4.5 1.0 1.0 7.5 6 54 19 8 26 80 20 10 10 85 30 15 40 120 30 15 ns 14.5 7 nC pF 0.070 0.105 - 0.6 - 20 - 20 3 - 1.5 100 -1 - 10 V mV/C V nA A A S Symbol Test Conditions Min Typ Max Unit www.vishay.com 2 Document Number: 74958 S-71290-Rev. A, 02-Jul-07 New Product SI3879DV Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time IS ISM VSD trr Qrr ta tb IF = - 3.5 A, di/dt = 100 A/s, TJ = 25 C IS = - 1.0 A, VGS = 0 V - 0.75 25 12 9 16 TC = 25 C - 2.7 - 20 - 1.2 40 20 A V ns nC ns Symbol Test Conditions Min Typ Max Unit Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Forward Voltage Drop Symbol VF Test Conditions IF = 1 A IF = 1 A, TJ = 125 C Vr = 5 V Vr = 5 V, TJ = 85 C Maximum Reverse Leakage Current Irm Vr = 20 V Vr = 20 V, TJ = 85 C Vr = 20 V, TJ = 125 C Junction Capacitance CT Vr = 10 V Min Typ 0.41 0.36 0.015 0.50 0.02 0.7 5 60 Max 0.45 0.41 0.08 5.00 0.10 7.00 50 pF mA Unit V Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 74958 S-71290-Rev. A, 02-Jul-07 www.vishay.com 3 New Product SI3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 30 VGS = 5 thru 4 V 24 ID - Drain Current (A) 1.6 3.5 V I D - Drain Current (A) 1.2 TC = 125 C 0.8 TC = 25 C 0.4 2V 0 0 1 2 3 4 5 0.0 0.0 TC = - 55 C 0.6 1.2 1.8 2.4 3.0 2.0 18 3V 12 2.5 V 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.20 650 Transfer Characteristics r DS(on) - On-Resistance () 0.16 VGS = 2.5 V C - Capacitance (pF) 520 Ciss 0.12 390 0.08 VGS = 4.5 V 0.04 260 Coss 130 Crss 0 0.00 0 2 4 6 8 10 0 4 8 12 16 20 I D - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 5 A VGS - Gate-to-Source Voltage (V) 8 VDS = 10 V r DS(on) - On-Resistance 1.5 1.7 ID = 3.5 A Capacitance VGS = 4.5 V (Normalized) 6 VDS = 5 V 4 VDS = 15 V 1.3 1.1 VGS = 2.5 V 2 0.9 0 0 2 4 6 8 10 0.7 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge www.vishay.com 4 On-Resistance vs. Junction Temperature Document Number: 74958 S-71290-Rev. A, 02-Jul-07 New Product SI3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 100 0.30 ID = 3.5 A 0.25 I S - Source Current (A) 10 r DS(on) - On-Resistance () 0.20 TJ = 150 C 1 TJ = 25 C 0.15 125 C 0.10 0.1 0.05 25 C 0.01 0.0 0.3 0.6 0.9 1.2 1.5 0.00 1.0 1.8 2.6 3.4 4.2 5.0 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Soure-Drain Diode Forward Voltage 0.4 50 On-Resistance vs. Gate-to-Source Voltage 0.3 VGS(th) Variance (V) 40 0.2 Power (W) 30 0.1 ID = 5 mA 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ - Junction Temperature (C) Threshold Voltage 100 Single Pulse Power, Junction-to-Ambient 10 I D - Drain Current (A) *Limited by rDS(on) 1 ms 1 10 ms 100 ms 0.1 1 s, 10 s dc TA = 25 C Single Pulse 0.01 0.001 0.1 *VGS 1 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Case Document Number: 74958 S-71290-Rev. A, 02-Jul-07 www.vishay.com 5 New Product SI3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 6.0 4.0 4.8 I D - Drain Current (A) 3.2 2.4 Power (W) 0 25 50 75 100 125 150 3.6 2.4 1.6 1.2 0.8 0.0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating, Junction-to-Foot 1.5 1.2 Power (W) 0.9 0.6 0.3 0.0 0 25 50 75 100 125 150 TC - Case Temperature (C) Power Derating, Junction-to-Ambient *The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74958 S-71290-Rev. A, 02-Jul-07 New Product SI3879DV Vishay Siliconix MOSFET TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Notes: PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 105 C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Document Number: 74958 S-71290-Rev. A, 02-Jul-07 www.vishay.com 7 New Product SI3879DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1.0E-01 1.0E-02 I R - Reverse Current (mA) 1.0E-03 1.0E-04 1.0E-05 VR = 10 V 1.0E-06 1.0E-07 1.0E-08 - 50 0.001 - 25 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 VSD - Source-to-Drain Voltage (V) I S - Source Current (A) 1 TJ = 150 C 10 VR = 20 V VR = 15 V TJ = 25 C 0.1 TJ = - 55 C 0.01 TJ - Junction Temperature (C) Reverse Current vs. Junction Temperature 300 30 Forward Diode Voltage CT - Junction Capacitance (pF) 240 24 180 Power (W) 18 120 12 60 6 0 0 4 8 12 16 20 0 0.001 0.01 0.1 Time (sec) 1 10 VDS - Drain-to-Source Voltage (V) Capacitance Single Pulse Power, Junction-to-Ambient www.vishay.com 8 Document Number: 74958 S-71290-Rev. A, 02-Jul-07 New Product SI3879DV Vishay Siliconix SCHOTTKY TYPICAL CHARACTERISTICS TA = 25 C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 PDM t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 125 C/W 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74958. Document Number: 74958 S-71290-Rev. A, 02-Jul-07 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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